Solid State

Termal Electrical and Optical Studies of Phase Transision

• Information Security Technologies (IST)
• Operating systems (CS)
• Operating systems, system programming (SE)

• Elastic Properties of Substitutional Solid Solutions InxTl1− xI and Sound Wave Velocities in Them
• Optical investigations of superionic phase transition in Ag2CdI4 thin films
• Temperature sensor based on the Tl 4 HgI 6 and Tl 4 PbI 6 crystals
• Thermal, Electrical and Optical Studies of Phase Transitions in Ag₂CdI₄ Solid Electrolyte
• Crystalline and band energy structure of Ag2CdI4
• Lattice vibration spectra of a₄bx₆ group crystals
• 1. Franiv A.V. Temperature behavior of thermal expansion and birefringence of InxTl1-xI- substitution solid solutions/ Franiv A.V., Stadnyk V.Y., Kashuba A.I., Brezvin R.S., Bovgira O.V., Futey O.V. // Optics and Spectroscopy. –– 2017. –– Vol. 123, № 1. –– P. 177-180.
• 2. Franiv A.V. Elastic properties of substitution solid solutions InxTl1-xI and sounds wave velocities in them / Franiv A.V., Kashuba A.I., Bovgira O.V., Futey O.V. // Ukr. J. Phys. –– 2017. –– Vol. 62, № 8. –– P. 679-684.
• 3. Solovyov M. X-ray luminescence of Tl4CdI6 crystals / Solovyov M., Kashuba A., Franiv V., Franiv A., Futey O. // IEEE Xplore (YSF-2017). – 2017. – P. 1-4.

Born on May 10, 1955 in Buchach, Ternopil region. Graduated with honors from the Faculty of Physics of Lviv University (1979). In 1977-79 he worked as a research engineer, senior engineer of the problem laboratory for the growth and study of physical properties of crystals. Since 1979 – Assistant Professor of the Department of Radioelectronic Materials Science, since 2013 – Assistant Professor of the Department of Radioelectronic and Computer Systems of the Faculty of Electronics and Computer Technologies. He is the author (and co-author) of 96 scientific papers and methodological developments, has 3 patents for inventions. He teaches the following courses: “E-learning and Document Management, Biometric Identification Systems. Research interests: superionic semiconductors and modeling of defects and gas formation processes in them. He has completed scientific internships: Lomonosov Moscow State University (1982); Department of Semiconductor Physics, Taras Shevchenko National University of Kyiv, Faculty of Radiophysics, 1986; NPO “Karat”, 2000 – Department of Growth and Research of Physical Properties of Single Crystals; Center for Mathematical Modeling of the Institute of Physical and Mathematical Sciences of the National Academy of Sciences of Ukraine, 2015.

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