Bohdan Sokolovskyi

Position: Associate Professor, Radioelectronic and Computer Systems Department

Scientific degree: Candidate of Physical and Mathematical Sciences

Academic status: Senior Researcher

Phone (office): (032) 239-41-52


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Research interests

Theoretical studies of heterogeneous semiconductors and devices based on them, computer modeling in semiconductor electronics


Selected publications

  1. Savitskii V.G. Anti-Stokes transformation of radiation by graded-gap semiconductors at magnetoconcentration effect / V.G. Savitskii, B.S. Sokolovskii // Fizika i Tekhnika Poluprovodnikov. – 1993. –V.27, No.1.– 95- 98 (in Russian).
  2. Sokolovskii B.S.. Photovotaic effect in thin graded-gap layers.Фотовольтаический эффект в тонких варизонных слоях / B.S. Sokolovskii // Fizika i Tekhnika Poluprovodnikov. – 1996. –V.30, No.6. – P. 1006-1010 (in Russian).
  3. Sokolovskii B.S. Multilayer structures based on doped graded-band-gap semiconductors: features of energy band diagram/ B. S. Sokolovskii // Phys. Stat. Solidi (a). – 1997. –V. 163, No.2. – P. 425 – 432.<425::AID-PSSA425>3.0.CO;2-Y
  4. Sokolovskii B.S. Current-voltage characteristics of p-n structures with band gap inhomogeneity in base region / B. S. Sokolovskii // Phys. Stat. Solidi (a). – 2001. –V. 186, No.3. – P. 453-460.<453::AID-PSSA453>3.0.CO;2-H
  5. Sokolovskii B.S. Negative differential resistance in a reverse-biased diode with inhomogeneous base / B.S. Sokolovskii // Technical Physics Letters. – 2002. –V.2 8. ­– P.1027–1029.
  6. Sokolovskii B.S. Theoretical study of the photovoltaic effect in thin variable-gap semiconductor layers / B.S. Sokolovskii, V. K. Pysarevskii, O. V. Nemolovskii, Z. Swiatek // Thin Solid Films. – 2003.– V. 431-432. – P. 457-460.
  7. Sokolovskii B.S. Electroluminescence of graded-gap structures with blocking and ohmic contacts / B. S. Sokolovskii, V. I. Ivanov-Omskii, G. A. Il’chuk // Semiconductors.– 2002. – V. 39. – P.1361–1368.
  8. Monastyrskii L.S. Modeling of photoconductivity of porous silicon // L. S. Monastyrskii, B. S. Sokolovskii, M. R. Pavlyk, P. P. Parandii // Advances in OptoElectronics . – 2011 . –V. 2011. –ID 896962.
  9. Monastyrskii L.S. Calculation of energy diagram of asymmetric graded-band-gap superlattices / L.S. Monastyrskii, B.S. Sokolovskii, M.P. Alekseichyk // Nanoscale Research Letters. – 2017. – V. 12: 203.
  10. Monastyrskii L. S. Modelling of the field effect in porous silicon / L.S. Monastyrskii, B.S. Sokolovskii, Y.V. Boyko, M. P. Alekseichyk //Applied Nanoscience. ­–2020. – V. 10. – P.2639–2643.

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Scientific biography


He was born on March 9, 1950, in Kulykiv, Zhovkva district, Lviv region. Physicist, Candidate of Physical and Mathematical Sciences (“Transfer of charge carriers in variant structures”, 1987), Senior Researcher (1991). Graduated from the Faculty of Physics of Lviv University (1972), postgraduate studies (1978). In 1972-1975 he worked as an engineer, in 1978-1986 as a senior engineer of the NDS, in 1986-1987 as a junior researcher at the problematic research laboratory of growth and study of physical properties of crystals, in 1987-1989 as a researcher. SCTB “Magnon”, 1989-1993 senior researcher, 1993-2000 senior researcher. Institute of Applied Physics, 2000-2014, senior researcher. Research Laboratory-14 Photoelectronics of the Department of Semiconductor Physics, since 2014 Associate Professor of the Department of Radio Electronic and Computer Systems. Author (co-author) of about 300 scientific papers.


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