Current issues of sensor electronics
Тип: Нормативний
Кафедра: department of sensory and semiconductor electronics
Навчальний план
| Семестр | Кредити | Звітність |
| 10 | 6 | Іспит |
Лекції
| Семестр | К-сть годин | Лектор | Група(и) |
| 10 | 32 | професор Pavlyk B. V. | ФеMм-11, ФеMм-12 |
Лабораторні
| Семестр | К-сть годин | Група | Викладач(і) |
| 10 | 32 | ФеMм-11 | професор Pavlyk B. V. |
| ФеMм-12 | професор Pavlyk B. V. |
Опис навчальної дисципліни
The discipline “Topical Issues of Sensor Electronics” studies the processes that occur in microelectronic sensors and sensor devices under the influence of external factors.
The aim of the discipline is for students to master the principles of interaction of ionizing electromagnetic radiation with materials and devices of sensor electronics, applications of microelectronic sensor systems, and familiarization with modern radiation-resistant sensors of ionizing radiation.
Рекомендована література
- 1. P.I. Baransky, A.V. Fedosov, G.P. Gaidar. Inhomogeneities of semiconductors and topical problems in radiation physics and nanotechnology. K., 2006, 314 p.
- 2. Kosobutsky P.S.. Physical bases of radiation modification of optical properties of wide-band electronic materials. L., LP, 2006, 357 p.
- 3. Kliuchnikov O.O., Nosovsky A.V.. Fundamentals of dosimetry of ionizing radiation. K., 2007, 250 p.
- 4. Didukh V.D., Rudyak Y.A., Mayhruk Z.V. Workshop on quantum-ray research methods and radiation physics. Ternopil, 2020, 156 p.
- 5. V.D. Didukh, Y.A. Rudyak, A.B. Horkunenko et al.- TSMU, 2018, 84 p.
- 6. B.V. Panchenko, R.O. Kharin. Study of the influence of solar panel degradation on the efficiency of a solar power plant. K.: “Information and control systems.” – 2023, – 122 p.
- 7. Bolesta I.M. Solid state physics. Lviv: Publishing Center of Ivan Franko National University of Lviv. 2003. – 480 p.
- 8. Savchyn V.P., Shuvar R.Y. Electron transfer in semiconductors and semiconductor structures. Lviv: Publishing Center of Ivan Franko National University of Lviv.- 2008.- 688 p.