Orest Fliunt

Position: Docent, Radioelectronic and Computer Systems Department

Scientific degree: Candidate of Physical and Mathematical Sciences

Academic status: Associate Professor

Web page: electronics.lnu.edu.ua

Google Scholar profile: scholar.google.com.ua

Research interests

Low-frequency dielectric spectroscopy of semiconductors,

universal power relaxation law,

light-beam intensity modulated photoconductivity of semiconductors,

physical experiment automation,

arbitrary accuracy numerical calculations

Courses

Publications

1. Fliunt Orest Phenomenological model of giant piezodielectric effect in GaSe layered crystals / Orest Fliunt // Applied Nanoscience. – 2020. – P. 1–7. https://doi.org/10.1007/s13204-020-01346-6 (IF= 3.198).

2. Fliunt Orest Multicomponent positron–electron annihilation kinetics in the MgO–Al2O3 ceramics in the frequency domain / Orest Fliunt, Halyna Klym, Adam Ingram // Applied Nanoscience. – 2020. – P. 1–7. https://doi.org/ 10.1007/s13204-020-01301-5 (IF= 3.198).

3. Pokutsa Alexander Sustainable oxidation of cyclohexane catalyzed by a VO(acac)2-oxalic acid tandem: the electrochemical motive of the process efficiency / Alexander Pokutsa, Pawel Bloniarz , Orest Fliunt et al // RSC Advances. – 2020. – Vol. 10, Is. 18. – P. 10959–10971. 10.1039/D0RA00495B (IF= 3.049).

4. Fl’unt O. Effect of water adsorption on positron-electron annihilation kinetics in the MgO–Al2O3 ceramics in the frequency domain / O. Fl’unt, H. Klym, A. Ingram, R. Szatanik // Applied Nanoscience. – 2019. – P. 1–6. doi= 10.1007/s13204-019-01040-2, url= https://doi.org/10.1007/s13204-019-01040-2 (IF= 3.198).

5. Fl’unt O. Ye. Distribution character of using of RAM by different program applications in operational system Ubuntu 16.04 LTS / О. Ye. Fl’unt // Scientific-practical conference „Open and free sourse software” (FOSS LVIV–2019). Materials and programs. – Lviv: Ivan Franko national university of Lviv. – 18–21 April 2019 р. – P. 24–36.

6. Fl’unt O. Frequency domain kinetics of positron–electron annihilation in the MgO–Al2O3 spinel-type ceramics / O. Fl’unt , H. Klym, A. Ingram // Applied Nanoscience. – 2019. – Vol. 9, Is. 5. – P. 1005–1010. doi= 10.1007/s13204-018-0708-x, url= https://doi.org/10.1007/s13204-018-0708-x (IF= 3.198).

7. Fl’unt O. Checking of linearity of dielectric response of layered GaSe crystals within range dominating by low-frequency dispersion / О. Fl’unt // Electronics and information technologies. – 2017. – Issue 8. – P. 51–58.

8. Fl’unt O. Oscillating processes in interband electronic transitions in InSe layered crystals / О. Fl’unt // Visnyk of the Lviv university. Series physics. – 2016. – Issue 51. – P. 98–105.

9. Fl’unt O. Estimation of accuracy limits of numerical integral fourier calculation of power spectra using cubic spline interpolation / О. Fl’unt // Electronics and information technologies. – 2016. – Issue 6. – P. 83–88.

10. Fl’unt O. Ye. Using of library of arbitrary accuracy calculations GNU MPFR для реалізації алгоритму перетворення Фур’є методом апроксимації spectra by cubic splines / О. Ye. Fl’unt // Scientific-practical conference „Open and free sourse software” (FOSS LVIV–2014). Materials and programs. – Lviv: Ivan Franko national university of Lviv. – 24–27 April 2014 р. – P. 32–34.

11. Fl’unt O. Effect of digit bit numbers on correctness and accuracy of numerical calculation of dielectric transition characteristics / О. Fl’unt // Visnyk of the Lviv university. Series physics. – 2013. – Is. 48. – С. 270–278.

12. Fl’unt O. Behaviour of low-frequency dispersion in GaSe crystals with change of temperature / О. Fl’unt // Electronics and information technologies. – 2012. – Issue 2. – С. 71–76.

13. Relationships between the efficiency of cyclohexane oxidation and the electrochemical parameters of the reaction solution / A. Pokutsa, O. Fliunt, Y. Кubaj et al // Journal of Molecular Catalysis A: Chemical. – 2011. – V. 347, N 1–2. – P. 15–21.

14. Fl’unt O. Singuliarities of temperature dependence of dielectric constant of high-resistivity GaSe crystals within the frame of the model of distribution of effective dipoles on relaxation times / О. Fl’unt // Electronics and information technologies. – 2011. – Issue 1. – С. 142–148.

15. Stakhira J.M. Effect of uniaxial stress on low-frequency dispersion of dielectric constant in high-resistivity GaSe crystals / J.M. Stakhira , O.Ye. Fl’unt , Ya.M. Fiyala // Ukr. J. Phys. – 2011. – V. 56, No 3. – P. 267–271.

16. Steblenko L. P. The effect of weak static magnetic field on photoconductivity and its relaxation in silicium crystals / L. P Steblenko, О. V. Koplak, А. N. Kurylyuk, О. Ye. Fl’unt // Bulletin of Taras Shevchenko National University of Kyiv. Series: Physics & Mathematics. – 2010. – Issue 4. – P. 291–295.

17. Fl’unt O. Transition characteristic of high-resistivity GaSe layered crystals, caused by polarization current / О. Fl’unt // Electrical engineering. – 2010. – Issue 61. – P. 69–75.

18. Fl’unt O. Application of the model of relaxation times distribution for describing dielectric dispersion in high-resistivity GaSe crystals/ О. Fl’unt // Electrical engineering. – 2010. – Is. 61. – P. 60–68.

19. Fl’unt O. Calculation of transition characteristic of low-resistivity GaSe layered crystals / О. Fl’unt // Visnyk of the Lviv university. Series physics. – 2009. – Is. 44. – P. 226–233.

20. Stakhira J.М. Effect of cadmium doping on dielectric spectrum of indium selenide / J.М. Stakhira, О.Ye. Fl’unt // Visnyk of the Lviv university. Series physics. – 2000. – Is.33. – P. 135–138.

21. Stakhira J. Low-frequency dielectric spectra of low-resistivity GaSe crystals / J. Stakhira, О. Fl’unt, Ya. Fiyala // J. Phys. Studies – 1998. – Vol. 2, No 1. – P. 136–138.

22. Stakhira J.М. Non-Debye character of dielectric spectra of low-frequency GaSe crystals / J.М. Stakhira, О.Ye. Fl’unt, Я.М. Fiyala // Visnyk of the Lviv university. Series physics. – 1997. – Is. 29. – P. 14–16.

23. Stakhira J.М. Accuracy increasing of impendance transformer using nodal method / J.М. Stakhira, О.Ye. Fl’unt // Visnyk of the Lviv university. Series physics.  – 1996.  – Is.28. – P. 105–108.

24. Stakhira J.М. Frequency dependence of conductivity of In4Se3 layered crystal / J.М. Stakhira, Т.М. Demkiv, О.Ye. Fl’unt // Ukr. J. Phys. – 1995. – Vol. 40, No 7. – P. 737–739.

Biography

Fliunt Orest Yevhenovych (8.IV.1968, Boryslav of Lviv region) – radiophysicist, PhD in physical and mathematical science, Associate Professor (Low-frequency dielectric polarization of indium and gallium selenide crystals, 2012). Graduated by physical faculty of Ivan Franko State University of Lviv on speciality Radiophysics and electronics (1990). In 1990–1993 post graduate student of Semiconductors Physics Chair, since 1993 Scientific researcher, Senior scientific reseacher, since 2002 Assistent Professor of Semiconductor Physics Chair. Since 2015 Assosiate Professor of Radioelectronic and Computer Systems Chair. Scientific interests: low-frequency dielectric spectroscopy of semiconductors, light-beam intensity modulated photoconductivity of semiconductors, universal power relaxation law, kinetic of processes in solids in frequency and time domains, arbitrary accuracy numerical calculations, model of behaviour of systems with fractional power law dispersion.

Schedule

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